IPN60R360PFD7SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 10A SOT223
$1.49
Available to order
Reference Price (USD)
1+
$1.49000
500+
$1.4751
1000+
$1.4602
1500+
$1.4453
2000+
$1.4304
2500+
$1.4155
Exquisite packaging
Discount
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The IPN60R360PFD7SATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPN60R360PFD7SATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 7W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-3-1
- Package / Case: TO-261-3
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