IPN70R1K4P7SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL 700V 4A SOT223
$0.75
Available to order
Reference Price (USD)
3,000+
$0.24862
6,000+
$0.23419
15,000+
$0.21976
30,000+
$0.20966
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPN70R1K4P7SATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPN70R1K4P7SATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
Related Products
Fairchild Semiconductor
FDP5690
Infineon Technologies
SPA20N65C3XK
IXYS
IXTT20P50P
Microchip Technology
MSC130SM120JCU3
Vishay Siliconix
SI2356DS-T1-GE3
STMicroelectronics
STI14NM50N
Infineon Technologies
IPB60R250CP
onsemi
NTGS1135PT1G
Rectron USA
RM24N200TI
Vishay Siliconix