SI2356DS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 4.3A TO236
$0.42
Available to order
Reference Price (USD)
3,000+
$0.12677
6,000+
$0.11949
15,000+
$0.11221
30,000+
$0.10347
75,000+
$0.09983
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SI2356DS-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI2356DS-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STI14NM50N
Infineon Technologies
IPB60R250CP
onsemi
NTGS1135PT1G
Rectron USA
RM24N200TI
Vishay Siliconix
SIR632DP-T1-RE3
Vishay Siliconix
SIRA88BDP-T1-GE3
Renesas Electronics America Inc
RJK0329DPB-01#J0
IXYS
IXFX52N100X
Vishay Siliconix
SIRA90DP-T1-RE3
Vishay Siliconix