IPN95R3K7P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 950V 2A SOT223
$1.12
Available to order
Reference Price (USD)
3,000+
$0.41894
6,000+
$0.39312
15,000+
$0.38021
30,000+
$0.37317
Exquisite packaging
Discount
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Meet the IPN95R3K7P7ATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPN95R3K7P7ATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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