IPP040N08NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V
$2.83
Available to order
Reference Price (USD)
1+
$2.83000
500+
$2.8017
1000+
$2.7734
1500+
$2.7451
2000+
$2.7168
2500+
$2.6885
Exquisite packaging
Discount
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The IPP040N08NF2SAKMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP040N08NF2SAKMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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