IPP045N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 100A TO220-3
$3.52
Available to order
Reference Price (USD)
1+
$3.10000
10+
$2.82100
100+
$2.29860
500+
$1.82420
1,000+
$1.53957
Exquisite packaging
Discount
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The IPP045N10N3GXKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPP045N10N3GXKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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