IPP072N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 80A TO220-3
$2.75
Available to order
Reference Price (USD)
1+
$2.16000
10+
$1.96200
100+
$1.59900
500+
$1.26900
1,000+
$1.07100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP072N10N3GXKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPP072N10N3GXKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
onsemi
NTP4302
Alpha & Omega Semiconductor Inc.
AOT266L
Infineon Technologies
BSS119N H7796
Vishay Siliconix
IRFBC40SPBF
Vishay Siliconix
SI7119DN-T1-GE3
Infineon Technologies
IPP65R150CFDXKSA2
STMicroelectronics
STF34NM60ND
Microchip Technology
APTM120DA30CT1G
Infineon Technologies
IRF3205ZLPBF
Infineon Technologies