IPP16CN10LGXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 54A TO220-3
$0.65
Available to order
Reference Price (USD)
1+
$0.65000
500+
$0.6435
1000+
$0.637
1500+
$0.6305
2000+
$0.624
2500+
$0.6175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP16CN10LGXKSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15.7mOhm @ 54A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 61µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4190 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
IXYS
IXTA80N10T
Diodes Incorporated
DMP31D7L-13
Nexperia USA Inc.
PMPB12UNEAX
onsemi
FDT86244
onsemi
NTR1P02LT1G
Toshiba Semiconductor and Storage
TK34E10N1,S1X
Rohm Semiconductor
SCT4045DEHRC11
Renesas Electronics America Inc
HAT2033RJ01-EL
Vishay Siliconix
SIR418DP-T1-GE3
Infineon Technologies