IPP330P10NMAKSA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO220-3
$6.16
Available to order
Reference Price (USD)
1+
$6.16000
500+
$6.0984
1000+
$6.0368
1500+
$5.9752
2000+
$5.9136
2500+
$5.852
Exquisite packaging
Discount
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Meet the IPP330P10NMAKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPP330P10NMAKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id: 4V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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