IPP50N12S3LAKSA1
Infineon Technologies
Infineon Technologies
OPTIMOS POWER-TRANSISTOR
$0.77
Available to order
Reference Price (USD)
1+
$0.77000
500+
$0.7623
1000+
$0.7546
1500+
$0.7469
2000+
$0.7392
2500+
$0.7315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPP50N12S3LAKSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the IPP50N12S3LAKSA1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Infineon Technologies for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Diodes Incorporated
FZT788BTA
onsemi
SMMBT3906LT3G
onsemi
MJ11028G
onsemi
MPSA92RLRMG
Microchip Technology
2N2904AL
onsemi
BUH100G
Fairchild Semiconductor
BC857BMTF
Nexperia USA Inc.
BST60,115
onsemi
2N5401YBU
Sanyo