Shopping cart

Subtotal: $0.00

IPP60R210CFD7XKSA1

Infineon Technologies
IPP60R210CFD7XKSA1 Preview
Infineon Technologies
MOSFET N CH
$3.74
Available to order
Reference Price (USD)
500+
$1.71056
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 64W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

Related Products

Nexperia USA Inc.

PMZ320UPEYL

Vishay Siliconix

SISA66DN-T1-GE3

Alpha & Omega Semiconductor Inc.

AON2406

Toshiba Semiconductor and Storage

TK3R3E08QM,S1X

Fairchild Semiconductor

NDS9400

Renesas Electronics America Inc

2SK2552C-T1-A

Renesas Electronics America Inc

2SJ555-90-E

Infineon Technologies

IRFI4110GPBF

Alpha & Omega Semiconductor Inc.

AON6226

Top