IPP65R045C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 46A TO220-3
$16.78
Available to order
Reference Price (USD)
1+
$12.65000
10+
$11.50200
100+
$9.77640
500+
$8.33866
1,000+
$7.64856
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP65R045C7XKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP65R045C7XKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.25mA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SI4866DY-T1-E3
onsemi
FDB082N15A
Panjit International Inc.
PJD4NA65_L2_00001
Infineon Technologies
IPP70N10SL16AKSA1
Vishay Siliconix
SI7143DP-T1-GE3
Vishay Siliconix
SIS110DN-T1-GE3
Nexperia USA Inc.
NX138AKVL
Infineon Technologies
IPP50R500CEXKSA1
Fairchild Semiconductor
HUF76633P3-F085
Diodes Incorporated