IPP80R360P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 13A TO220-3
$3.25
Available to order
Reference Price (USD)
1+
$2.74000
10+
$2.47100
100+
$1.98540
500+
$1.54424
1,000+
$1.27951
Exquisite packaging
Discount
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The IPP80R360P7XKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP80R360P7XKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 84W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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