IPS60R210PFD7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 16A TO251-3
$2.39
Available to order
Reference Price (USD)
1+
$2.39000
500+
$2.3661
1000+
$2.3422
1500+
$2.3183
2000+
$2.2944
2500+
$2.2705
Exquisite packaging
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Enhance your electronic projects with the IPS60R210PFD7SAKMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPS60R210PFD7SAKMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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