RM130N200T7
Rectron USA
Rectron USA
MOSFET N-CHANNEL 200V 132A TO247
$4.30
Available to order
Reference Price (USD)
1+
$4.30000
500+
$4.257
1000+
$4.214
1500+
$4.171
2000+
$4.128
2500+
$4.085
Exquisite packaging
Discount
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The RM130N200T7 from Rectron USA redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RM130N200T7 offers the precision and reliability you need. Trust Rectron USA to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 429W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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