TK33S10N1Z,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 33A DPAK
$1.65
Available to order
Reference Price (USD)
2,000+
$0.63700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK33S10N1Z,LQ by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI4134DY-T1-E3
Alpha & Omega Semiconductor Inc.
AOT16N50
onsemi
FCP650N80Z
STMicroelectronics
STP70NF03L
Alpha & Omega Semiconductor Inc.
AOD4N60
NXP USA Inc.
BUK654R6-55C,127
NTE Electronics, Inc
NTE2393
Infineon Technologies
IPL65R1K5C6SATMA1
Diodes Incorporated
DMN63D1LW-7
Infineon Technologies