IPTG111N20NM3FDATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOG-8
$9.50
Available to order
Reference Price (USD)
1+
$9.50000
500+
$9.405
1000+
$9.31
1500+
$9.215
2000+
$9.12
2500+
$9.025
Exquisite packaging
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The IPTG111N20NM3FDATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
- Vgs(th) (Max) @ Id: 4V @ 267µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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