IPW60R037CSFDXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N CH
$13.44
Available to order
Reference Price (USD)
240+
$10.64667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPW60R037CSFDXKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPW60R037CSFDXKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
- Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
onsemi
NDT452AP
Vishay Siliconix
SI2325DS-T1-BE3
Vishay Siliconix
SIJA58DP-T1-GE3
Infineon Technologies
IPI80N06S407AKSA2
Vishay Siliconix
SISS80DN-T1-GE3
Infineon Technologies
IPD60R3K3C6ATMA1
NXP USA Inc.
BUK7514-55A,127
Micro Commercial Co
MCQ18N03-TP
Fairchild Semiconductor
FQP5N80
IXYS Integrated Circuits Division