IPW60R041C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 77.5A TO247-3
$19.55
Available to order
Reference Price (USD)
1+
$15.89000
10+
$14.54900
240+
$12.53942
720+
$10.86549
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPW60R041C6FKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPW60R041C6FKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STS6NF20V
Fairchild Semiconductor
FDS7098N3
Vishay Siliconix
SI7463DP-T1-GE3
STMicroelectronics
STP150NF04
Vishay Siliconix
SIB457EDK-T1-GE3
Infineon Technologies
BSO203SPHXUMA1
Diodes Incorporated
DMN1150UFB-7B
Fairchild Semiconductor
FQD3N40TM
onsemi
FDMC7572S
Nexperia USA Inc.