IPW60R045P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 61A TO247-3-41
$10.37
Available to order
Reference Price (USD)
1+
$10.37000
500+
$10.2663
1000+
$10.1626
1500+
$10.0589
2000+
$9.9552
2500+
$9.8515
Exquisite packaging
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The IPW60R045P7XKSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.08mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 201W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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