IPW60R190C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 20.2A TO247-3
$5.14
Available to order
Reference Price (USD)
1+
$4.15000
10+
$3.72900
240+
$3.10125
720+
$2.55710
1,200+
$2.19433
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPW60R190C6FKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPW60R190C6FKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
IXYS
IXTA90N055T2
Nexperia USA Inc.
PSMN3R8-100BS,118
STMicroelectronics
STFI4N62K3
onsemi
2SK3709
onsemi
NIF9N05CLT3G
Vishay Siliconix
IRF9Z24PBF
Vishay Siliconix
SISA88DN-T1-GE3
STMicroelectronics
STN4NF03L
Microchip Technology
APT13F120S
STMicroelectronics