IPW65R080CFDAFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
$14.56
Available to order
Reference Price (USD)
1+
$13.33000
10+
$12.08300
240+
$10.08858
720+
$8.59231
1,200+
$7.59478
Exquisite packaging
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The IPW65R080CFDAFKSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
- Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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