IR2011PBF
Infineon Technologies
Infineon Technologies
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
$4.86
Available to order
Reference Price (USD)
1+
$3.52000
10+
$3.16100
100+
$2.58990
500+
$2.20472
1,000+
$1.85940
Exquisite packaging
Discount
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Infineon Technologies's IR2011PBF represents the cutting edge of PMIC - Gate Driver technology, engineered to deliver unmatched switching performance for power electronics. This IC classification specializes in synchronous rectification and half-bridge configurations with integrated bootstrap diodes. Notable characteristics comprise UVLO protection, programmable turn-on/off thresholds, and 4A peak output current capacity. Primary applications span data center power supplies, welding equipment, and DC-DC converters. A concrete example: the IR2011PBF enables 98% efficiency in 1kW telecom power modules while withstanding 100V/ns common-mode transients. The device's reinforced isolation meets IEC 61800-5-1 standards, particularly valuable for medical imaging systems and railway traction converters.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.7V, 2.2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 200 V
- Rise / Fall Time (Typ): 35ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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