IR2111SPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
$3.28
Available to order
Reference Price (USD)
1+
$2.73000
95+
$2.31000
190+
$1.96811
570+
$1.61700
1,045+
$1.33980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents the IR2111SPBF as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 8.3V, 12.6V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Infineon Technologies
2EDL8124GXUMA1
Texas Instruments
SM74104MA/NOPB
Renesas Electronics America Inc
ISL6622CRZ-T
Infineon Technologies
AUIRB24427STR
Analog Devices Inc.
LTC1155CS8#PBF
STMicroelectronics
PM8851D
Microchip Technology
MIC4129YME
onsemi
NCV51705MNTWG
Infineon Technologies
IRS21091PBF
Microchip Technology