IRF6637TRPBF
Infineon Technologies
Infineon Technologies
IRF6637 - 12V-300V N-CHANNEL POW
$0.83
Available to order
Reference Price (USD)
4,800+
$0.72419
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRF6637TRPBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRF6637TRPBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MP
- Package / Case: DirectFET™ Isometric MP
Related Products
Alpha & Omega Semiconductor Inc.
AOT430
Taiwan Semiconductor Corporation
TSM9409CS RLG
Microchip Technology
TN2504N8-G
onsemi
FDS3580
onsemi
FDMC86260ET150
Microchip Technology
APT1001RBVRG
Infineon Technologies
BSZ097N10NS5ATMA1
Vishay Siliconix
SI4896DY-T1-GE3
Panjit International Inc.
PJD8NA50_R2_00001
Renesas Electronics America Inc