PJD8NA50_R2_00001
Panjit International Inc.
Panjit International Inc.
500V N-CHANNEL MOSFET
$1.27
Available to order
Reference Price (USD)
1+
$1.27000
500+
$1.2573
1000+
$1.2446
1500+
$1.2319
2000+
$1.2192
2500+
$1.2065
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJD8NA50_R2_00001 by Panjit International Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PJD8NA50_R2_00001 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 826 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Renesas Electronics America Inc
2SK2462(04)-AZ
Vishay Siliconix
SI8481DB-T1-E1
Infineon Technologies
IPN80R2K4P7ATMA1
Fairchild Semiconductor
HUF76132S3S
Fairchild Semiconductor
FQA6N70
Vishay Siliconix
SI5448DU-T1-GE3
Vishay Siliconix
SI3464DV-T1-GE3
NXP USA Inc.
BUK7E4R0-80E,127
Nexperia USA Inc.
PXN9R0-30QLJ
onsemi