SI8481DB-T1-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 9.7A 4MICRO FOOT
$0.15
Available to order
Reference Price (USD)
3,000+
$0.16852
6,000+
$0.15884
15,000+
$0.14916
30,000+
$0.13754
75,000+
$0.13270
Exquisite packaging
Discount
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The SI8481DB-T1-E1 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
- Package / Case: 4-UFBGA
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