IRF730PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 400V 5.5A TO220AB
$1.64
Available to order
Reference Price (USD)
1+
$1.64000
500+
$1.6236
1000+
$1.6072
1500+
$1.5908
2000+
$1.5744
2500+
$1.558
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRF730PBF-BE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF730PBF-BE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
onsemi
MCH6353-TL-W
Rectron USA
RM150N30LT2
Harris Corporation
IRFP243
onsemi
FDN340P
Vishay Siliconix
SQM40041EL_GE3
onsemi
NTD5N50T4
Nexperia USA Inc.
BUK9Y104-100B,115
IXYS
IXFX250N10P
IXYS
IXTH34N65X2
Taiwan Semiconductor Corporation