IRF8306MTRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 23A DIRECTFET
$1.17
Available to order
Reference Price (USD)
1+
$1.17000
500+
$1.1583
1000+
$1.1466
1500+
$1.1349
2000+
$1.1232
2500+
$1.1115
Exquisite packaging
Discount
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The IRF8306MTRPBF by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IRF8306MTRPBF is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MX
- Package / Case: DirectFET™ Isometric MX
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