IRF9Z24NPBF
Infineon Technologies
Infineon Technologies
MOSFET P-CH 55V 12A TO220AB
$0.94
Available to order
Reference Price (USD)
1+
$1.55000
10+
$1.37700
100+
$1.08820
500+
$0.84394
1,000+
$0.66627
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRF9Z24NPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF9Z24NPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 175mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STD10P6F6
Vishay Siliconix
SI2301CDS-T1-E3
STMicroelectronics
STF13N65M2
IXYS
IXFT16N80P
onsemi
MTD3055VL
Infineon Technologies
BSP92PL6327HTSA1
Fairchild Semiconductor
FQA90N10V2
Rectron USA
RM80N80HD
STMicroelectronics
STT6N3LLH6
Infineon Technologies