IRFB52N15DPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 51A TO220AB
$3.28
Available to order
Reference Price (USD)
1+
$3.20000
10+
$2.85700
100+
$2.34250
500+
$1.89684
1,000+
$1.59975
Exquisite packaging
Discount
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Meet the IRFB52N15DPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFB52N15DPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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