IRFD9120
Harris Corporation
Harris Corporation
MOSFET P-CH 100V 1A 4DIP
$0.85
Available to order
Reference Price (USD)
1+
$0.85000
500+
$0.8415
1000+
$0.833
1500+
$0.8245
2000+
$0.816
2500+
$0.8075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFD9120 from Harris Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Harris Corporation's IRFD9120 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
Related Products
Infineon Technologies
IRF6726MTRPBF
Alpha & Omega Semiconductor Inc.
AOD7S65
Diodes Incorporated
ZVP3306FTA
Nexperia USA Inc.
BUK7613-100E,118
IXYS
IXTP08N50D2
Alpha & Omega Semiconductor Inc.
AO3400A
NXP USA Inc.
BUK9529-100B/C127
Vishay Siliconix
SIHP28N65EF-GE3
IXYS
IXFN64N60P
STMicroelectronics