IRFF232
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.93
Available to order
Reference Price (USD)
1+
$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFF232 by Harris Corporation is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Harris Corporation for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 25W
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
Related Products
Infineon Technologies
BSL307SPL6327HTSA1
Alpha & Omega Semiconductor Inc.
AONR21307
Fairchild Semiconductor
FDS6064N3
onsemi
2SK1420
Fairchild Semiconductor
HUF76407D3
Infineon Technologies
IPD90R1K2C3ATMA2
Toshiba Semiconductor and Storage
SSM3K16FU,LF
Infineon Technologies
IRF6665TRPBF
Infineon Technologies
IPA80R360P7XKSA1
IXYS