IRFR3711ZTRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 93A DPAK
$1.46
Available to order
Reference Price (USD)
6,000+
$0.49376
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRFR3711ZTRPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFR3711ZTRPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
NTE Electronics, Inc
NTE2932
Nexperia USA Inc.
BUK7277-55A,118
Vishay Siliconix
SQ2389ES-T1_GE3
onsemi
NVH4L040N65S3F
Panjit International Inc.
PJQ4444P-AU_R2_000A1
Diodes Incorporated
DMN2056U-7
Infineon Technologies
IPB180N04S401ATMA1
Infineon Technologies
IPP129N10NF2SAKMA1
onsemi
3LN01M-TL-E
STMicroelectronics