IRFSL3306PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 120A TO262
$3.02
Available to order
Reference Price (USD)
1+
$2.66000
50+
$2.14860
100+
$1.93370
500+
$1.50400
1,000+
$1.24617
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRFSL3306PBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRFSL3306PBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Nexperia USA Inc.
BUK761R7-40E,118
onsemi
FDMS6673BZ
Fairchild Semiconductor
FDP6030L
Diodes Incorporated
DMN2040UVT-13
Rohm Semiconductor
RSR025P03HZGTL
Fairchild Semiconductor
FQI5N60CTU
Infineon Technologies
IPA60R460CEXKSA1
IXYS
IXFX64N50P
Rectron USA
RM75N60LD
STMicroelectronics