SCT040H65G3AG
STMicroelectronics
STMicroelectronics
AUTOMOTIVE-GRADE SILICON CARBIDE
$16.17
Available to order
Reference Price (USD)
1+
$16.17000
500+
$16.0083
1000+
$15.8466
1500+
$15.6849
2000+
$15.5232
2500+
$15.3615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SCT040H65G3AG single MOSFET from STMicroelectronics. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust STMicroelectronics's SCT040H65G3AG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 4.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V
- Vgs (Max): +18V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 221W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Vishay Siliconix
IRFR110PBF-BE3
Infineon Technologies
IPB65R150CFDATMA2
Vishay Siliconix
IRFP26N60LPBF
Nexperia USA Inc.
PMPB12R5EPX
onsemi
2V7002WT1G
STMicroelectronics
STFU15NM65N
NXP USA Inc.
BUK754R7-60E,127
STMicroelectronics
STK22N6F3
Vishay Siliconix
SIHF520STRL-GE3
onsemi