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IRFW730BTMNL

Fairchild Semiconductor
IRFW730BTMNL Preview
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.59
Available to order
Reference Price (USD)
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$0.59000
500+
$0.5841
1000+
$0.5782
1500+
$0.5723
2000+
$0.5664
2500+
$0.5605
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 73W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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