IRFZ24PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 17A TO220AB
$1.72
Available to order
Reference Price (USD)
1+
$1.72000
500+
$1.7028
1000+
$1.6856
1500+
$1.6684
2000+
$1.6512
2500+
$1.634
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IRFZ24PBF-BE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IRFZ24PBF-BE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPB60R060P7ATMA1
Fairchild Semiconductor
FCU5N60TU
Infineon Technologies
IRF9Z34NPBF
onsemi
NTB35N15T4G
onsemi
FCP260N60E
Sanken
GKI03080
Microchip Technology
VP2110K1-G
Harris Corporation
2N6792TX
Nexperia USA Inc.
BUK962R5-60E,118
Vishay Siliconix