2N6792TX
Harris Corporation
Harris Corporation
2A, 400V, 1.8OHM, N-CHANNEL
$7.82
Available to order
Reference Price (USD)
1+
$7.82000
500+
$7.7418
1000+
$7.6636
1500+
$7.5854
2000+
$7.5072
2500+
$7.429
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the 2N6792TX by Harris Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2N6792TX stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Harris Corporation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
Related Products
Nexperia USA Inc.
BUK962R5-60E,118
Vishay Siliconix
SQJ868EP-T1_GE3
IXYS
IXFR140N30P
Taiwan Semiconductor Corporation
TSM60NB380CP ROG
Fairchild Semiconductor
FDD6776A
onsemi
NVGS4141NT1G
Vishay Siliconix
IRFU220PBF
Rohm Semiconductor
R6547ENZ4C13
Vishay Siliconix
IRFBC30ASTRLPBF
Vishay Siliconix