IRG7PH35UD-EP
Infineon Technologies
Infineon Technologies
IGBT 1200V 50A COPAK247
$4.27
Available to order
Reference Price (USD)
400+
$5.72235
Exquisite packaging
Discount
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Enhance your electronic projects with the IRG7PH35UD-EP Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRG7PH35UD-EP ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRG7PH35UD-EP for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 180 W
- Switching Energy: 1.06mJ (on), 620µJ (off)
- Input Type: Standard
- Gate Charge: 85 nC
- Td (on/off) @ 25°C: 30ns/160ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 105 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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