IRLU3636PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A IPAK
$2.65
Available to order
Reference Price (USD)
3,000+
$0.91699
Exquisite packaging
Discount
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Meet the IRLU3636PBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRLU3636PBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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