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NDD01N60T4G

onsemi
NDD01N60T4G Preview
onsemi
MOSFET N-CH 600V 1.5A DPAK
$0.20
Available to order
Reference Price (USD)
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$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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