TSM018NA03CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 185A 8PDFN
$1.41
Available to order
Reference Price (USD)
2,500+
$0.59906
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TSM018NA03CR RLG by Taiwan Semiconductor Corporation is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TSM018NA03CR RLG is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3479 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STU1HN60K3
Micro Commercial Co
SI2307-TP
Fairchild Semiconductor
FQI6N50TU
Infineon Technologies
IPB65R110CFDATMA1
Rohm Semiconductor
R6076MNZ1C9
Toshiba Semiconductor and Storage
TK8A50DA(STA4,Q,M)
STMicroelectronics
STD10N60DM2
Vishay Siliconix
SI6423DQ-T1-GE3
Infineon Technologies
IRFP2907PBF
Fairchild Semiconductor