ISC017N04NM5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 193A TDSON-8
$2.06
Available to order
Reference Price (USD)
1+
$2.06000
500+
$2.0394
1000+
$2.0188
1500+
$1.9982
2000+
$1.9776
2500+
$1.957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISC017N04NM5ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the ISC017N04NM5ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
Microchip Technology
APT53F80J
Fairchild Semiconductor
FDU8874
IXYS
IXFN150N10
onsemi
NTRV4101PT1G
onsemi
NTMJS0D8N04CLTWG
Vishay Siliconix
SIHF5N50D-E3
Toshiba Semiconductor and Storage
TK4A50D(STA4,Q,M)
Microchip Technology
TN2510N8-G
UnitedSiC
UJ4C075060B7S
Infineon Technologies