ISC027N10NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-8
$4.66
Available to order
Reference Price (USD)
1+
$4.66000
500+
$4.6134
1000+
$4.5668
1500+
$4.5202
2000+
$4.4736
2500+
$4.427
Exquisite packaging
Discount
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The ISC027N10NM6ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the ISC027N10NM6ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 116µA
- Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 217W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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