ISC0805NLSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 13A/71A TDSON
$2.26
Available to order
Reference Price (USD)
1+
$2.26000
500+
$2.2374
1000+
$2.2148
1500+
$2.1922
2000+
$2.1696
2500+
$2.147
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISC0805NLSATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-46
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FCHD190N65S3R0-F155
Vishay Siliconix
IRFB18N50KPBF
Infineon Technologies
AUIRL1404S
Infineon Technologies
BSC039N06NSATMA1
Nexperia USA Inc.
BUK7M10-40EX
Vishay Siliconix
SI4403DDY-T1-GE3
Toshiba Semiconductor and Storage
TK7A50D(STA4,Q,M)
Fairchild Semiconductor
FCP9N60N
Infineon Technologies
IRF640NLPBF
Nexperia USA Inc.