ISL2110ABZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
$5.67
Available to order
Reference Price (USD)
1+
$4.43000
10+
$3.97500
98+
$3.75755
196+
$3.25648
294+
$3.08949
588+
$2.77219
1,078+
$2.33800
2,548+
$2.22110
Exquisite packaging
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Optimize your power systems with Renesas Electronics America Inc's ISL2110ABZ, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The ISL2110ABZ demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8V ~ 14V
- Logic Voltage - VIL, VIH: 3.7V, 7.4V
- Current - Peak Output (Source, Sink): 3A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 114 V
- Rise / Fall Time (Typ): 9ns, 7.5ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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