IXBN75N170A
IXYS
IXYS
IGBT MOD 1700V 75A 625W SOT227B
$58.85
Available to order
Reference Price (USD)
10+
$51.20800
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's IXBN75N170A IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The IXBN75N170A offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the IXBN75N170A in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the IXBN75N170A IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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