IXFH16N50P
IXYS
IXYS
MOSFET N-CH 500V 16A TO247AD
$5.96
Available to order
Reference Price (USD)
1+
$4.12000
30+
$3.30767
120+
$3.01350
510+
$2.44020
1,020+
$2.05800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFH16N50P single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFH16N50P for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Nexperia USA Inc.
PSMN9R5-30YLC,115
IXYS
IXFX24N100Q3
Vishay Siliconix
SIHP7N60E-E3
Toshiba Semiconductor and Storage
TK12A50D(STA4,Q,M)
Vishay Siliconix
IRF630PBF
Transphorm
TP65H300G4LSG
Infineon Technologies
IPD90N10S4L06ATMA1
Vishay Siliconix
SIR618DP-T1-GE3
NXP USA Inc.
BUK9515-100A127
Texas Instruments