SIR618DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 14.2A PPAK SO-8
$0.55
Available to order
Reference Price (USD)
3,000+
$0.54694
6,000+
$0.52126
15,000+
$0.50292
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SIR618DP-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SIR618DP-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
NXP USA Inc.
BUK9515-100A127
Texas Instruments
CSD25303W1015
STMicroelectronics
STP2N62K3
Vishay Siliconix
SIHH14N65EF-T1-GE3
Fairchild Semiconductor
FQB11P06TM
Infineon Technologies
IPP65R190C7
Toshiba Semiconductor and Storage
TK56A12N1,S4X
onsemi
FDN361BN
Alpha & Omega Semiconductor Inc.
AOSS32136C
onsemi